CONCENTRATION PROFILES OF RECOMBINATION CENTERS IN SEMICONDUCTOR JUNCTIONS EVALUATED FROM CAPACITANCE TRANSIENTS

被引：25

作者：

SAH, CT

NEUGROSCHEL, A

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1976年 / 23卷 / 09期

关键词：

D O I：

10.1109/T-ED.1976.18538

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1069 / 1074

页数：6

共 14 条

[1] IMPURITY CENTERS IN PN JUNCTIONS DETERMINED FROM SHIFTS IN THERMALLY STIMULATED CURRENT AND CAPACITANCE RESPONSE WITH HEATING RATE [J].

BUEHLER, MG .

SOLID-STATE ELECTRONICS, 1972, 15 (01) :69-+

[2] PHOTOCAPACITANCE STUDIES OF OXYGEN DONOR IN GAP .2. CAPTURE CROSS-SECTIONS [J].

HENRY, CH ;

KUKIMOTO, H ;

MILLER, GL ;

MERRITT, FR .

PHYSICAL REVIEW B, 1973, 7 (06) :2499-2507

[3] PHOTOCAPACITANCE STUDIES OF OXYGEN DONOR IN GAP I OPTICAL CROSS-SECTIONS, ENERGY-LEVELS, AND CONCENTRATION [J].

KUKIMOTO, H ;

HENRY, CH ;

MERRITT, FR .

PHYSICAL REVIEW B, 1973, 7 (06) :2486-2499

[4] PHOTOCAPACITANCE STUDIES OF DEEP-DOUBLE ELECTRON-TRAP OXYGEN IN GALLIUM-PHOSPHIDE [J].

KUKIMOTO, H ;

HENRY, CH ;

MILLER, GL .

APPLIED PHYSICS LETTERS, 1972, 21 (06) :251-&

[5] CORRELATION METHOD FOR SEMICONDUCTOR TRANSIENT SIGNAL MEASUREMENTS [J].

MILLER, GL ;

RAMIREZ, JV ;

ROBINSON, DAH .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (06) :2638-2644

[6]

NEUGROSCHEL A, TO BE PUBLISHED

[7] EXPERIMENTS ON ORIGIN OF PROCESS-INDUCED RECOMBINATION CENTERS IN SILICON [J].

SAH, CT ;

WANG, CT .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) :1767-1776

[8] THERMAL AND OPTICAL EMISSION AND CAPTURE RATES AND CROSS SECTIONS OF ELECTRONS AND HOLES AT IMPERFECTION CENTERS IN SEMICONDUCTORS FROM PHOTO AND DARK JUNCTION CURRENT AND CAPACITANCE EXPERIMENTS [J].

SAH, CT ;

FORBES, L ;

ROSIER, LL ;

TASCH, AF .

SOLID-STATE ELECTRONICS, 1970, 13 (06) :759-+

[9] THERMALLY STIMULATED CAPACITANCE FOR SHALLOW MAJORITY-CARRIER TRAPS IN EDGE REGION OF SEMICONDUCTOR JUNCTIONS [J].

SAH, CT ;

WALKER, JW .

APPLIED PHYSICS LETTERS, 1973, 22 (08) :384-385

[10] CURRENT AND CAPACITANCE TRANSIENT RESPONSES OF MOS CAPACITOR .2. RECOMBINATION CENTERS IN SURFACE SPACE-CHARGE LAYER [J].

SAH, CT ;

FU, HS .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 14 (01) :59-70

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