EXPERIMENTS ON ORIGIN OF PROCESS-INDUCED RECOMBINATION CENTERS IN SILICON

被引：79

作者：

SAH, CT

WANG, CT

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 04期

关键词：

D O I：

10.1063/1.321758

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1767 / 1776

页数：10

相关论文

共 26 条

[1] ADAMIC J, 1964, WASHINGTON M ELECTRO
[2] PROPERTIES OF GOLD IN SILICON
BULLIS, WM
[J]. SOLID-STATE ELECTRONICS, 1966, 9 (02) : 143 - &
[3] ENHANCED GOLD SOLUBILITY EFFECT IN HEAVILY N-TYPE SILICON
CAGNINA, SF
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (04) : 498 - &
[4] SOLUBILITY OF GOLD IN P-TYPE SILICON
DORWARD, RC
KIRKALDY, JS
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (09) : 1284 - &
[5] METAL PRECIPITATES IN SILICON P-N JUNCTIONS
GOETZBERGER, A
SHOCKLEY, W
[J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (10) : 1821 - 1824
[6] DIFFUSION OF GOLD IN THIN SILICON SLICES
HUNTLEY, FA
WILLOUGHBY, AF
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (09) : 1231 - +
[7] GETTERING OF GOLD AND COPPER FROM SILICON
LAMBERT, JL
REESE, M
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (11) : 1055 - &
[8] A STUDY OF GETTERING EFFECT OF METALLIC IMPURITIES IN SILICON
NAKAMURA, M
KATO, T
OI, N
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (05) : 512 - &
[9] GETTERING OF GOLD AND ITS INFLUENCE ON SOME TRANSISTOR PARAMETERS
PAREKH, PC
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (10) : 1401 - &
[10] THERMAL EMISSION RATES OF CARRIERS AT GOLD CENTERS IN SILICON
SAH, CT
FORBES, L
ROSIER, LI
TASCH, AF
TOLE, AB
[J]. APPLIED PHYSICS LETTERS, 1969, 15 (05) : 145 - +