A STUDY OF GETTERING EFFECT OF METALLIC IMPURITIES IN SILICON

被引：47

作者：

NAKAMURA, M

KATO, T

OI, N

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1968年 / 7卷 / 05期

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D O I：

10.1143/JJAP.7.512

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：512 / &

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