PHOTOCAPACITANCE STUDIES OF DEEP-DOUBLE ELECTRON-TRAP OXYGEN IN GALLIUM-PHOSPHIDE

被引：28

作者：

KUKIMOTO, H

HENRY, CH

MILLER, GL

机构：

来源：

APPLIED PHYSICS LETTERS | 1972年 / 21卷 / 06期

关键词：

D O I：

10.1063/1.1654365

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：251 / &

相关论文

共 14 条

[1] DETERMINATION OF OPTICAL IONIZATION CROSS SECTIONS IN GAP USING CHARGE STORAGE AND IMPURITY PHOTOVOLTAIC EFFECT
BJORKLUND, G
GRIMMEISS, HG
[J]. SOLID-STATE ELECTRONICS, 1971, 14 (07) : 589 - +
[2] LUMINESCENCE AND MINORITY CARRIER RECOMBINATION IN P-TYPE GAP(ZN,O)
DISHMAN, JM
DIDOMENI.M
CARUSO, R
[J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (06): : 1988 - +
[3] FABRE ME, 1970, CR HEBD ACAD SCI, V270, P848
[4] OXYGEN DOPING OF SOLUTION-GROWN GAP
FOSTER, LM
SCARDEFI.J
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (04) : 494 - &
[5] TRAP LEVELS IN GALLIUM ARSENIDE
FURUKAWA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (06) : 675 - &
[6] FURUKAWA Y, 1969, JPN J APPL PHYS, V6, P413
[7] CHARGE-CARRIER CAPTURE AND ITS EFFECT ON TRANSITION CAPACITANCE IN GAP-CU DIODES
GRIMMEIS.HG
OLOFSSON, G
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (06) : 2526 - +
[8] EVALUATION OF ZN-O COMPLEX AND OXYGEN-DONOR ELECTRON-CAPTURE CROSS-SECTIONS IN P-TYPE GAP - LIMITS ON QUANTUM EFFICIENCY OF RED-EMITTING (ZN,O)-DOPED MATERIAL
JAYSON, JS
BACHRACH, RZ
SCHUMAKER, NE
DAPKUS, PD
[J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 6 (06): : 2357 - +
[9] KOTINA IM, 1969, SOV PHYS SEMICOND+, V3, P319
[10] DIRECT OBSERVATION OF MULTIPLICITY OF IMPURITY CHARGE STATES IN SEMICONDUCTORS FROM LOW-TEMPERATURE HIGH-FREQUENCY PHOTOCAPACITANCE
SAH, CT
ROSIER, LL
FORBES, L
[J]. APPLIED PHYSICS LETTERS, 1969, 15 (10) : 316 - &