THERMALLY STIMULATED CAPACITANCE FOR SHALLOW MAJORITY-CARRIER TRAPS IN EDGE REGION OF SEMICONDUCTOR JUNCTIONS

被引：39

作者：

SAH, CT

WALKER, JW

机构：

[1] UNIV ILLINOIS, DEPT ELECTR ENGN, URBANA, IL 61801 USA

[2] UNIV ILLINOIS, MAT RES LAB, URBANA, IL 61801 USA

来源：

APPLIED PHYSICS LETTERS | 1973年 / 22卷 / 08期

关键词：

D O I：

10.1063/1.1654683

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：384 / 385

页数：2

共 19 条

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CHAN, WW ;

SAH, CT .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (12) :4768-&

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DAVIES, DE ;

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APPLIED PHYSICS LETTERS, 1971, 18 (12) :548-&

[3]

FU HS, 1972, B AM PHYS SOC, V17, P307

[4] THERMAL IONIZATION RATES AND ENERGIES OF HOLES AT DOUBLE ACCEPTOR ZINC CENTERS IN SILICON [J].

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SAH, CT .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 14 (02) :405-415

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MILLER, GL .

APPLIED PHYSICS LETTERS, 1972, 21 (06) :251-&

[6]

KUKIMOTO H, TO BE PUBLISHED

[7] THERMAL EMISSION AND CAPTURE OF ELECTRONS AT SULFUR CENTERS IN SILICON [J].

ROSIER, LL ;

SAH, CT .

SOLID-STATE ELECTRONICS, 1971, 14 (01) :41-+

[8] PHOTOIONIZATION OF ELECTRONS AT SULFUR CENTERS IN SILICON [J].

ROSIER, LL ;

SAH, CT .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (10) :4000-&

[9] THERMAL EMISSION RATES OF CARRIERS AT GOLD CENTERS IN SILICON [J].

SAH, CT ;

FORBES, L ;

ROSIER, LI ;

TASCH, AF ;

TOLE, AB .

APPLIED PHYSICS LETTERS, 1969, 15 (05) :145-+

[10] DIRECT OBSERVATION OF MULTIPLICITY OF IMPURITY CHARGE STATES IN SEMICONDUCTORS FROM LOW-TEMPERATURE HIGH-FREQUENCY PHOTOCAPACITANCE [J].

SAH, CT ;

ROSIER, LL ;

FORBES, L .

APPLIED PHYSICS LETTERS, 1969, 15 (10) :316-&

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