THERMALLY STIMULATED CAPACITANCE FOR SHALLOW MAJORITY-CARRIER TRAPS IN EDGE REGION OF SEMICONDUCTOR JUNCTIONS

被引：39

作者：

SAH, CT

WALKER, JW

机构：

[1] UNIV ILLINOIS, DEPT ELECTR ENGN, URBANA, IL 61801 USA

[2] UNIV ILLINOIS, MAT RES LAB, URBANA, IL 61801 USA

来源：

APPLIED PHYSICS LETTERS | 1973年 / 22卷 / 08期

关键词：

D O I：

10.1063/1.1654683

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：384 / 385

页数：2

共 19 条

[11] LOW-TEMPERATURE HIGH-FREQUENCY CAPACITANCE MEASUREMENTS OF DEEP- AND SHALLOW-LEVEL IMPURITY CENTER CONCENTRATIONS [J].

SAH, CT ;

ROSIER, LL ;

FORBES, L .

APPLIED PHYSICS LETTERS, 1969, 15 (06) :161-+

[12] THERMALLY STIMULATED CAPACITANCE (TSCAP) IN P-N-JUNCTIONS [J].

SAH, CT ;

WALKER, JW ;

CHAN, WW ;

FU, HS .

APPLIED PHYSICS LETTERS, 1972, 20 (05) :193-&

[13] FREQUENCY DEPENDENCE OF REVERSE-BIASED CAPACITANCE OF GOLD-DOPED SILICON P+N STEP JUNCTIONS [J].

SAH, CT ;

REDDI, VGK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) :345-+

[14] THERMAL AND OPTICAL EMISSION AND CAPTURE RATES AND CROSS SECTIONS OF ELECTRONS AND HOLES AT IMPERFECTION CENTERS IN SEMICONDUCTORS FROM PHOTO AND DARK JUNCTION CURRENT AND CAPACITANCE EXPERIMENTS [J].

SAH, CT ;

FORBES, L ;

ROSIER, LL ;

TASCH, AF .

SOLID-STATE ELECTRONICS, 1970, 13 (06) :759-+

[15] RECOMBINATION-GENERATION AND OPTICAL PROPERTIES OF GOLD ACCEPTOR IN SILICON [J].

TASCH, AF ;

SAH, CT .

PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02) :800-&

[16] PROPERTIES OF 1 MEV ELECTRON-IRRADIATED DEFECT CENTERS IN P-TYPE SILICON [J].

WALKER, JW ;

SAH, CT .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 11 (02) :513-&

[17]

WALKER JW, TO BE PUBLISHED

[18] MEASUREMENT OF TRAPPED-MINORITY-CARRIER THERMAL EMISSION RATES FROM AU, AG, AND CO TRAPS IN SILICON [J].

YAU, LD ;

SAH, CT .

APPLIED PHYSICS LETTERS, 1972, 21 (04) :157-&

[19] THERMAL IONIZATION RATES AND ENERGIES OF ELECTRONS AND HOLES AT SILVER CENTERS IN SILICON [J].

YAU, LD ;

SAH, CT .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 6 (02) :561-&

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