MEASUREMENT OF TRAPPED-MINORITY-CARRIER THERMAL EMISSION RATES FROM AU, AG, AND CO TRAPS IN SILICON

被引：41

作者：

YAU, LD

SAH, CT

机构：

来源：

APPLIED PHYSICS LETTERS | 1972年 / 21卷 / 04期

关键词：

D O I：

10.1063/1.1654324

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：157 / &

相关论文

共 12 条

[1] EXCITED IMPURITY STATES AND TRANSIENT PHOTOCONDUCTIVITY IN COBALT-DOPED SILICON
CHANG, MCP
PENCHINA, CM
MOORE, JS
[J]. PHYSICAL REVIEW B, 1971, 4 (04): : 1229 - &
[2] PROPERTIES OF GOLD-DOPED SILICON
COLLINS, CB
CARLSON, RO
GALLAGHER, CJ
[J]. PHYSICAL REVIEW, 1957, 105 (04): : 1168 - 1173
[3] IMPACT IONIZATION IN COBALT-DOPED SILICON
GHANDHI, SK
MORTENSON, KE
PARK, JN
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (06): : 635 - +
[4] ENERGY LEVELS IN COBALT COMPENSATED SILICON
MOORE, JS
CHANG, MCP
PENCHINA, CM
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (13) : 5282 - &
[5] ENERGY LEVELS AND NEGATIVE PHOTOCONDUCTIVITY IN COBALT-DOPED SILICON
PENCHINA, CM
MOORE, JS
HOLONYAK, N
[J]. PHYSICAL REVIEW, 1966, 143 (02): : 634 - &
[6] THERMAL EMISSION AND CAPTURE OF ELECTRONS AT SULFUR CENTERS IN SILICON
ROSIER, LL
SAH, CT
[J]. SOLID-STATE ELECTRONICS, 1971, 14 (01) : 41 - +
[7] THERMAL EMISSION RATES OF CARRIERS AT GOLD CENTERS IN SILICON
SAH, CT
FORBES, L
ROSIER, LI
TASCH, AF
TOLE, AB
[J]. APPLIED PHYSICS LETTERS, 1969, 15 (05) : 145 - +
[8] LOW-TEMPERATURE HIGH-FREQUENCY CAPACITANCE MEASUREMENTS OF DEEP- AND SHALLOW-LEVEL IMPURITY CENTER CONCENTRATIONS
SAH, CT
ROSIER, LL
FORBES, L
[J]. APPLIED PHYSICS LETTERS, 1969, 15 (06) : 161 - +
[9] THERMAL AND OPTICAL EMISSION AND CAPTURE RATES AND CROSS SECTIONS OF ELECTRONS AND HOLES AT IMPERFECTION CENTERS IN SEMICONDUCTORS FROM PHOTO AND DARK JUNCTION CURRENT AND CAPACITANCE EXPERIMENTS
SAH, CT
FORBES, L
ROSIER, LL
TASCH, AF
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 759 - +
[10] RECOMBINATION-GENERATION AND OPTICAL PROPERTIES OF GOLD ACCEPTOR IN SILICON
TASCH, AF
SAH, CT
[J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02): : 800 - &