EXCITED IMPURITY STATES AND TRANSIENT PHOTOCONDUCTIVITY IN COBALT-DOPED SILICON

被引：34

作者：

CHANG, MCP

PENCHINA, CM

MOORE, JS

机构：

来源：

PHYSICAL REVIEW B | 1971年 / 4卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.4.1229

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1229 / &

共 13 条

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[7] KORNILOV BV, 1963, FIZ TVERD TELA, V5, P3305
[8] ENERGY LEVELS IN COBALT COMPENSATED SILICON
MOORE, JS
CHANG, MCP
PENCHINA, CM
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (13) : 5282 - &
[9] ELECTRICAL OSCILLATIONS IN SILICON COMPENSATED WITH DEEP LEVELS
MOORE, JS
PENCHINA, CM
HOLONYAK, N
SIRKIS, MD
YAMADA, T
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (05) : 2009 - &
[10] ENERGY LEVELS AND NEGATIVE PHOTOCONDUCTIVITY IN COBALT-DOPED SILICON
PENCHINA, CM
MOORE, JS
HOLONYAK, N
[J]. PHYSICAL REVIEW, 1966, 143 (02): : 634 - &