ELECTRICAL OSCILLATIONS IN SILICON COMPENSATED WITH DEEP LEVELS

被引：37

作者：

MOORE, JS

PENCHINA, CM

HOLONYAK, N

SIRKIS, MD

YAMADA, T

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1966年 / 37卷 / 05期

关键词：

D O I：

10.1063/1.1708661

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2009 / &

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