ENERGY LEVELS IN COBALT COMPENSATED SILICON

[1] BOLTAKS BI, 1963, DIFFUSION SEMICONDUC, pCH7

[2] CHANG MC, UNPUBLISHED

[3] PROPERTIES OF SILICON DOPED WITH IRON OR COPPER [J]. PHYSICAL REVIEW, 1957, 108 (06): : 1409 - 1414

[4] PROPERTIES OF SILICON AND GERMANIUM .2. [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 1281 - 1300

[5] PROPERTIES OF NICKEL IN SILICON [J]. PROCEEDINGS OF THE IEEE, 1969, 57 (09) : 1484 - &

[6] IMPACT IONIZATION IN COBALT-DOPED SILICON [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (06): : 635 - +

[7] HOLONYAK N, 1962, P IRE, V50, P2241

[8] ENERGY LEVELS AND NEGATIVE PHOTOCONDUCTIVITY IN COBALT-DOPED SILICON [J]. PHYSICAL REVIEW, 1966, 143 (02): : 634 - &

[9] Schibli E., 1967, MATER SCI ENG, V2, P173, DOI 10.1016/0025-5416(67)90056-0

[10] TRUMBORE IA, 1960, BELL SYSTEM TECH J, V39, P205

[1] BOLTAKS BI, 1963, DIFFUSION SEMICONDUC, pCH7

[2] CHANG MC, UNPUBLISHED

[3] PROPERTIES OF SILICON DOPED WITH IRON OR COPPER [J]. PHYSICAL REVIEW, 1957, 108 (06): : 1409 - 1414

[4] PROPERTIES OF SILICON AND GERMANIUM .2. [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 1281 - 1300

[5] PROPERTIES OF NICKEL IN SILICON [J]. PROCEEDINGS OF THE IEEE, 1969, 57 (09) : 1484 - &

[6] IMPACT IONIZATION IN COBALT-DOPED SILICON [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (06): : 635 - +

[7] HOLONYAK N, 1962, P IRE, V50, P2241

[8] ENERGY LEVELS AND NEGATIVE PHOTOCONDUCTIVITY IN COBALT-DOPED SILICON [J]. PHYSICAL REVIEW, 1966, 143 (02): : 634 - &

[9] Schibli E., 1967, MATER SCI ENG, V2, P173, DOI 10.1016/0025-5416(67)90056-0

[10] TRUMBORE IA, 1960, BELL SYSTEM TECH J, V39, P205