PROPERTIES OF NICKEL IN SILICON

被引：21

作者：

GHANDHI, SK

THIEL, FL

机构：

[1] Rensselaer Polytechnic Institute, Troy. N. Y.

[2] Rensselaer Polytechnic Institute, Troy, N.Y.

来源：

PROCEEDINGS OF THE IEEE | 1969年 / 57卷 / 09期

关键词：

D O I：

10.1109/PROC.1969.7323

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes the properties of active nickel centers in silicon. In particular the role of nickel in both increasing and reducing minority carrier lifetime in silicon integrated circuits is described, and an assessment made of its use in this application. © 1969 IEEE. All rights reserved.

引用

页码：1484 / &

共 15 条

[1] THE SOLID SOLUBILITY OF NICKEL IN SILICON DETERMINED BY NEUTRON ACTIVATION ANALYSIS
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VERHEIJKE, ML
[J]. APPLIED PHYSICS LETTERS, 1962, 1 (01) : 19 - 20
[2] CHUA WB, 1967, THESIS RENSSELAER PO
[3] GOLD AS A RECOMBINATION CENTRE IN SILICON
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GOKHALE, BV
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (08) : 685 - +
[4] GHANDI SK, 1966, IEEE T ELECTRON DEVI, VED13, P515
[5] Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700
[6] Iizuka T., 1963, JPN J APPL PHYS, V2, P309
[7] GETTERING OF METALLIC IMPURITIES FROM PLANAR SILICON DIODES
ING, SW
MORRISON, RE
ALT, LL
ALDRICH, RW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) : 533 - 537
[8] KUNO HJ, 1964, IEEE T ELECTRON DEVI, VED11, P8
[9] MORDKOVICH VN, 1964, SOV PHYS-SOL STATE, V6, P654
[10] SILVERMAN SJ, 1958, J ELECTROCHEM SOC, V105, P591

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