IMPACT IONIZATION IN COBALT-DOPED SILICON

被引：13

作者：

GHANDHI, SK

MORTENSON, KE

PARK, JN

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1965年 / 53卷 / 06期

关键词：

D O I：

10.1109/PROC.1965.3949

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：635 / +

页数：1

共 5 条

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[2] DOUBLE INJECTION DIODES AND RELATED DI PHENOMENA IN SEMICONDUCTORS
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[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (12): : 2421 - &
[3] MORTENSON KE, PRIVATE COMMUNICATIO
[4] IMPACT IONIZATION OF IMPURITIES IN GERMANIUM
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BURSTEIN, E
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 2 (01) : 1 - 23
[5] SOLID SOLUBILITIES OF IMPURITY ELEMENTS IN GERMANIUM AND SILICON
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[J]. BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (01): : 205 - 233