AVALANCHE INJECTION IN SEMICONDUCTORS

被引：65

作者：

GUNN, JB

机构：

来源：

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B | 1956年 / 69卷 / 08期

关键词：

D O I：

10.1088/0370-1301/69/8/301

中图分类号：

Q [生物科学];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

引用

页码：781 / 790

页数：10

共 14 条

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[2] RESISTANCE OF GERMANIUM CONTACTS
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[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1952, 65 (395): : 908 - 909
[3] GUNN JB, J ELECTRONICS
[4] LEHOVEC, 1951, PHYS REV, V83, P603
[5] AVALANCHE BREAKDOWN IN SILICON
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[7] ALLOYED JUNCTION AVALANCHE TRANSISTORS
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[8] AVALANCHE BREAKDOWN IN GERMANIUM
MILLER, SL
[J]. PHYSICAL REVIEW, 1955, 99 (04): : 1234 - 1241
[9] REEVES AH, 1955, ELECTR COMMUN, V32, P112
[10] MOBILITY OF HOLES AND ELECTRONS IN HIGH ELECTRIC FIELDS
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[J]. PHYSICAL REVIEW, 1953, 90 (05): : 766 - 769