RECOMBINATION-GENERATION AND OPTICAL PROPERTIES OF GOLD ACCEPTOR IN SILICON

[1] APPLICATION OF QUANTUM DEFECT TECHNIQUES TO PHOTOIONIZATION OF IMPURITIES IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (10) : 2087 - &

[2] RECOMBINATION PROPERTIES OF GOLD IN SILICON [J]. PHYSICAL REVIEW, 1958, 111 (06): : 1515 - 1518

[3] RADIATIVE CAPTURE BY IMPURITIES IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1967, 163 (03): : 809 - +

[4] PROPERTIES OF GOLD-DOPED SILICON [J]. PHYSICAL REVIEW, 1957, 105 (04): : 1168 - 1173

[5] DEXTER DL, 1958, SOLID STATE PHYSICS, V6

[6] GOLD AS A RECOMBINATION CENTRE IN SILICON [J]. SOLID-STATE ELECTRONICS, 1965, 8 (08) : 685 - +

[7] FORBES L, 1969, T IEEE, VED16, P1036

[8] Frenkel J, 1938, PHYS REV, V54, P647, DOI 10.1103/PhysRev.54.647

[9] Frenkel J., 1938, TECH PHYS USSR, V5, P685

[10] 3-DIMENSIONAL POOLE-FRENKEL EFFECT [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4871 - &

[1] APPLICATION OF QUANTUM DEFECT TECHNIQUES TO PHOTOIONIZATION OF IMPURITIES IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (10) : 2087 - &

[2] RECOMBINATION PROPERTIES OF GOLD IN SILICON [J]. PHYSICAL REVIEW, 1958, 111 (06): : 1515 - 1518

[3] RADIATIVE CAPTURE BY IMPURITIES IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1967, 163 (03): : 809 - +

[4] PROPERTIES OF GOLD-DOPED SILICON [J]. PHYSICAL REVIEW, 1957, 105 (04): : 1168 - 1173

[5] DEXTER DL, 1958, SOLID STATE PHYSICS, V6

[6] GOLD AS A RECOMBINATION CENTRE IN SILICON [J]. SOLID-STATE ELECTRONICS, 1965, 8 (08) : 685 - +

[7] FORBES L, 1969, T IEEE, VED16, P1036

[8] Frenkel J, 1938, PHYS REV, V54, P647, DOI 10.1103/PhysRev.54.647

[9] Frenkel J., 1938, TECH PHYS USSR, V5, P685

[10] 3-DIMENSIONAL POOLE-FRENKEL EFFECT [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4871 - &