PROPERTIES OF 1 MEV ELECTRON-IRRADIATED DEFECT CENTERS IN P-TYPE SILICON

被引：21

作者：

WALKER, JW

SAH, CT

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1972年 / 11卷 / 02期

关键词：

D O I：

10.1002/pssa.2210110214

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：513 / &

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