PHOTOCONDUCTIVITY STUDIES OF DEFECTS IN P-TYPE SILICON - BORON INTERSTITIAL AND ALUMINUM INTERSTITIAL DEFECTS

被引：36

作者：

CHERKI, M

KALMA, AH

机构：

来源：

PHYSICAL REVIEW B-SOLID STATE | 1970年 / 1卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.1.647

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：647 / &

共 31 条

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[8] PHOTOCONDUCTIVITY STUDIES OF DEFECTS IN SILICON - DIVACANCY-ASSOCIATED ENERGY LEVELS [J].

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[9]

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