PHOTOCONDUCTIVITY STUDIES OF DEFECTS IN SILICON - DIVACANCY-ASSOCIATED ENERGY LEVELS

被引：103

作者：

KALMA, AH

CORELLI, JC

机构：

来源：

PHYSICAL REVIEW | 1968年 / 173卷 / 03期

关键词：

D O I：

10.1103/PhysRev.173.734

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：734 / +

页数：1

共 41 条

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[5] 1.8- 3.3- AND 3.9-MU BANDS IN IRRADIATED SILICON - CORRELATIONS WITH DIVACANCY
CHENG, LJ
CORELLI, JC
CORBETT, JW
WATKINS, GD
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[6] CHENG LJ, 1967, APPL PHYS LETT, VA24, P729
[7] CHENG LJ, 1966, THESIS RENSSELAER PO
[8] CHENG LJ, 1968, RADIATION EFFECTS SE
[9] SILICON DIVACANCY AND ITS DIRECT PRODUCTION BY ELECTRON IRRADIATION
CORBETT, JW
WATKINS, GD
[J]. PHYSICAL REVIEW LETTERS, 1961, 7 (08) : 314 - &
[10] CORBETT JW, 1966, ELECTRON RADIATION D