SILICON DIVACANCY AND ITS DIRECT PRODUCTION BY ELECTRON IRRADIATION

被引：104

作者：

CORBETT, JW

WATKINS, GD

机构：

来源：

关键词：

D O I：

10.1103/PhysRevLett.7.314

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：314 / &

相关论文

共 3 条

[1] DEFECTS IN IRRADIATED SILICON .2. INFRARED ABSSORPTION OF SI-A CENTER
CORBETT, JW
WATKINS, GD
CHRENKO, RM
MCDONALD, RS
[J]. PHYSICAL REVIEW, 1961, 121 (04): : 1015 - &
[2] DEFECTS IN IRRADIATED SILICON .1. ELECTRON SPIN RESONANCE OF SI-A CENTER
WATKINS, GD
CORBETT, JW
[J]. PHYSICAL REVIEW, 1961, 121 (04): : 1001 - &
[3] WATKINS GD, DISCUSSIONS FARADAY