CORRELATION METHOD FOR SEMICONDUCTOR TRANSIENT SIGNAL MEASUREMENTS

[1] KIMERLING LC, COMMUNICATION

[2] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032

[3] MIDDLETON D, 1960, INTRO STATISTICAL CO

[4] FEEDBACK METHOD FOR INVESTIGATING CARRIER DISTRIBUTIONS IN SEMICONDUCTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (10) : 1103 - &

[5] MILNES AG, 1972, DEEP IMPURITIES SEMI, P178

[6] THERMAL AND OPTICAL EMISSION AND CAPTURE RATES AND CROSS SECTIONS OF ELECTRONS AND HOLES AT IMPERFECTION CENTERS IN SEMICONDUCTORS FROM PHOTO AND DARK JUNCTION CURRENT AND CAPACITANCE EXPERIMENTS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 759 - +

[1] KIMERLING LC, COMMUNICATION

[2] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032

[3] MIDDLETON D, 1960, INTRO STATISTICAL CO

[4] FEEDBACK METHOD FOR INVESTIGATING CARRIER DISTRIBUTIONS IN SEMICONDUCTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (10) : 1103 - &

[5] MILNES AG, 1972, DEEP IMPURITIES SEMI, P178

[6] THERMAL AND OPTICAL EMISSION AND CAPTURE RATES AND CROSS SECTIONS OF ELECTRONS AND HOLES AT IMPERFECTION CENTERS IN SEMICONDUCTORS FROM PHOTO AND DARK JUNCTION CURRENT AND CAPACITANCE EXPERIMENTS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 759 - +