SCHOTTKY-BARRIER AND MIS TUNNEL-DIODES ON HYDROGENATED AMORPHOUS SILICON OF PHOTO-VOLTAIC QUALITY PREPARED BY CATHODE SPUTTERING - ELECTRIC PROPERTIES DETERMINED BY CAPACITANCE MEASUREMENTS

被引：25

作者：

VIKTOROVITCH, P ^{[1
]}

JOUSSE, D ^{[1
]}

CHENEVASPAULE, A ^{[1
]}

VIEUXROCHAS, L ^{[1
]}

机构：

[1] CEN,CEA,LETI,EPA,F-38041 GRENOBLE,FRANCE

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1979年 / 14卷 / 01期

关键词：

D O I：

10.1051/rphysap:01979001401020100

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：201 / 208

页数：8

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