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ROLE OF INTERFACIAL LAYER IN METAL-SEMICONDUCTOR SOLAR CELLS
被引:135
作者
:
FONASH, SJ
论文数:
0
引用数:
0
h-index:
0
机构:
PENN STATE UNIV,DEPT ENGN SCI & MECH,UNIVERSITY PK,PA 16802
PENN STATE UNIV,DEPT ENGN SCI & MECH,UNIVERSITY PK,PA 16802
FONASH, SJ
[
1
]
机构
:
[1]
PENN STATE UNIV,DEPT ENGN SCI & MECH,UNIVERSITY PK,PA 16802
来源
:
JOURNAL OF APPLIED PHYSICS
|
1975年
/ 46卷
/ 03期
关键词
:
D O I
:
10.1063/1.321694
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:1286 / 1289
页数:4
相关论文
共 5 条
[1]
STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES
[J].
CARD, HC
论文数:
0
引用数:
0
h-index:
0
CARD, HC
;
RHODERICK, EH
论文数:
0
引用数:
0
h-index:
0
RHODERICK, EH
.
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1971,
4
(10)
:1589
-+
[2]
SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS
[J].
COWLEY, AM
论文数:
0
引用数:
0
h-index:
0
COWLEY, AM
;
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
.
JOURNAL OF APPLIED PHYSICS,
1965,
36
(10)
:3212
-&
[3]
CURRENT TRANSPORT IN METAL SEMICONDUCTOR CONTACTS - UNIFIED APPROACH
[J].
FONASH, SJ
论文数:
0
引用数:
0
h-index:
0
FONASH, SJ
.
SOLID-STATE ELECTRONICS,
1972,
15
(07)
:783
-&
[4]
DEPLETION-LAYER PHOTOEFFECTS IN SEMICONDUCTORS
[J].
GARTNER, WW
论文数:
0
引用数:
0
h-index:
0
GARTNER, WW
.
PHYSICAL REVIEW,
1959,
116
(01)
:84
-87
[5]
STIRN RJ, 1973, 10 IEEE PHOT SPEC C
←
1
→
共 5 条
[1]
STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES
[J].
CARD, HC
论文数:
0
引用数:
0
h-index:
0
CARD, HC
;
RHODERICK, EH
论文数:
0
引用数:
0
h-index:
0
RHODERICK, EH
.
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1971,
4
(10)
:1589
-+
[2]
SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS
[J].
COWLEY, AM
论文数:
0
引用数:
0
h-index:
0
COWLEY, AM
;
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
.
JOURNAL OF APPLIED PHYSICS,
1965,
36
(10)
:3212
-&
[3]
CURRENT TRANSPORT IN METAL SEMICONDUCTOR CONTACTS - UNIFIED APPROACH
[J].
FONASH, SJ
论文数:
0
引用数:
0
h-index:
0
FONASH, SJ
.
SOLID-STATE ELECTRONICS,
1972,
15
(07)
:783
-&
[4]
DEPLETION-LAYER PHOTOEFFECTS IN SEMICONDUCTORS
[J].
GARTNER, WW
论文数:
0
引用数:
0
h-index:
0
GARTNER, WW
.
PHYSICAL REVIEW,
1959,
116
(01)
:84
-87
[5]
STIRN RJ, 1973, 10 IEEE PHOT SPEC C
←
1
→