ELECTRONIC PROPERTIES OF AMORPHOUS SILICON IN SOLAR-CELL OPERATION

被引：76

作者：

WRONSKI, CR ^{[1
]}

机构：

[1] RCA LABS,PRINCETON,NJ 08540

来源：

关键词：

D O I：

10.1109/T-ED.1977.18740

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：351 / 357

页数：7

共 11 条

[1] AMORPHOUS SILICON SOLAR-CELL
CARLSON, DE
WRONSKI, CR
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (11) : 671 - 673
[2] AMORPHOUS SILICON SOLAR-CELLS
CARLSON, DE
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 449 - 453
[3] CARLSON DE, 1976, 18TH ANN EL MAT C SA
[4] Loveland R. J., 1973, Journal of Non-Crystalline Solids, V13, P55, DOI 10.1016/0022-3093(73)90035-5
[5] MADEN A, 1976, J NONCRYST SOLIDS, V20, P239
[6] Rose A, 1963, CONCEPTS PHOTOCONDUC
[7] SCHEWCHUN J, 1974, SOLID STATE ELECTRON, V17, P563
[8] SCHOTTKY-BARRIER CHARACTERISTICS OF METAL-AMORPHOUS-SILICON DIODES
WRONSKI, CR
CARLSON, DE
DANIEL, RE
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (09) : 602 - 605
[9] EFFECTS OF DEEP CENTERS ON N-TYPE GAP SCHOTTKY BARRIERS
WRONSKI, CR
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) : 3805 - &
[10] WRONSKI CR, 1976, 1976 IEEE INT EL DEV