EFFECTS OF DEEP CENTERS ON N-TYPE GAP SCHOTTKY BARRIERS

被引：19

作者：

WRONSKI, CR

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来源：

JOURNAL OF APPLIED PHYSICS | 1970年 / 41卷 / 09期

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D O I：

10.1063/1.1659511

中图分类号：

O59 [应用物理学];

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页码：3805 / &

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共 19 条

[1] SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS
COWLEY, AM
SZE, SM
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) : 3212 - &
[2] DEPLETION CAPACITANCE AND DIFFUSION POTENTIAL OF GALLIUM PHOSPHIDE SCHOTTKY-BARRIER DIODES
COWLEY, AM
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (08) : 3024 - &
[3] INFRARED DONOR-ACCEPTOR PAIR SPECTRA INVOLVING DEEP OXYGEN DONOR IN GALLIUM PHOSPHIDE
DEAN, PJ
HENRY, CH
FROSCH, CJ
[J]. PHYSICAL REVIEW, 1968, 168 (03): : 812 - &
[4] THE CHARGE AND POTENTIAL DISTRIBUTIONS AT THE ZINC OXIDE ELECTRODE
DEWALD, JF
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (03): : 615 - 639
[5] METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM
GOODMAN, AM
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) : 329 - &
[6] SURFACE-BARRIER DIODES ON SILICON CARBIDE
HAGEN, SH
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (03) : 1458 - &
[7] DC CHARACTERISTICS OF SILICON AND GERMANIUM POINT CONTACT CRYSTAL RECTIFIERS .2. THE MULTICONTACT THEORY
JOHNSON, VA
SMITH, RN
YEARIAN, HJ
[J]. JOURNAL OF APPLIED PHYSICS, 1950, 21 (04) : 283 - 289
[8] METAL-SEMICONDUCTOR SURFACE BARRIERS
MEAD, CA
[J]. SOLID-STATE ELECTRONICS, 1966, 9 (11-1) : 1023 - &
[9] PROPERTIES OF GAP SCHOTTKY BARRIER DIODES AT ELEVATED TEMPERATURES
NANNICHI, Y
PEARSON, GL
[J]. SOLID-STATE ELECTRONICS, 1969, 12 (05) : 341 - &
[10] Rose A, 1963, CONCEPTS PHOTOCONDUC