SURFACE-BARRIER DIODES ON SILICON CARBIDE

[1] [Anonymous], 1957, RECTIFYING SEMICONDU

[2] ARCHER RJ, 1963, ANN NY ACAD SCI, V101, P697

[3] OPTICAL PROPERTIES OF CUBIC SIC - LUMINESCENCE OF NITROGEN-EXCITON COMPLEXES + INTERBAND ABSORPTION [J]. PHYSICAL REVIEW, 1964, 133 (4A): : 1163 - +

[4] EXCITON RECOMBINATION RADIATION AND PHONON SPECTRUM OF 6H SIC [J]. PHYSICAL REVIEW, 1962, 127 (06): : 1868 - &

[5] SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) : 3212 - &

[6] DEPLETION CAPACITANCE AND DIFFUSION POTENTIAL OF GALLIUM PHOSPHIDE SCHOTTKY-BARRIER DIODES [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (08) : 3024 - &

[7] THE CHARGE AND POTENTIAL DISTRIBUTIONS AT THE ZINC OXIDE ELECTRODE [J]. BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (03): : 615 - 639

[8] The analysis of photoelectric sensitivity curves for clean metals at various temperatures [J]. PHYSICAL REVIEW, 1931, 38 (01): : 45 - 56

[9] METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) : 329 - &

[10] THEORY OF SURFACE STATES [J]. PHYSICAL REVIEW, 1965, 138 (6A): : 1689 - &

[1] [Anonymous], 1957, RECTIFYING SEMICONDU

[2] ARCHER RJ, 1963, ANN NY ACAD SCI, V101, P697

[3] OPTICAL PROPERTIES OF CUBIC SIC - LUMINESCENCE OF NITROGEN-EXCITON COMPLEXES + INTERBAND ABSORPTION [J]. PHYSICAL REVIEW, 1964, 133 (4A): : 1163 - +

[4] EXCITON RECOMBINATION RADIATION AND PHONON SPECTRUM OF 6H SIC [J]. PHYSICAL REVIEW, 1962, 127 (06): : 1868 - &

[5] SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) : 3212 - &

[6] DEPLETION CAPACITANCE AND DIFFUSION POTENTIAL OF GALLIUM PHOSPHIDE SCHOTTKY-BARRIER DIODES [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (08) : 3024 - &

[7] THE CHARGE AND POTENTIAL DISTRIBUTIONS AT THE ZINC OXIDE ELECTRODE [J]. BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (03): : 615 - 639

[8] The analysis of photoelectric sensitivity curves for clean metals at various temperatures [J]. PHYSICAL REVIEW, 1931, 38 (01): : 45 - 56

[9] METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) : 329 - &

[10] THEORY OF SURFACE STATES [J]. PHYSICAL REVIEW, 1965, 138 (6A): : 1689 - &