STUDY OF LIGHT-INDUCED CREATION OF DEFECTS IN A-SI-H BY MEANS OF SINGLE AND DUAL-BEAM PHOTOCONDUCTIVITY

被引：104

作者：

HAN, D ^{[1
]}

FRITZSCHE, H ^{[1
]}

机构：

[1] UNIV CHICAGO,JAMES FRANCK INST,CHICAGO,IL 60637

来源：

关键词：

D O I：

10.1016/0022-3093(83)90604-X

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：397 / 400

页数：4

共 7 条

[1] DIRECT MEASUREMENT OF GAP-STATE ABSORPTION IN HYDROGENATED AMORPHOUS-SILICON BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY
JACKSON, WB
AMER, NM
[J]. PHYSICAL REVIEW B, 1982, 25 (08): : 5559 - 5562
[2] SPECTRUM OF PHOTOINDUCED OPTICAL-ABSORPTION IN ALPHA-SI-H
OCONNOR, P
TAUC, J
[J]. SOLID STATE COMMUNICATIONS, 1980, 36 (11) : 947 - 949
[3] DUAL LIGHT-BEAM MODULATION OF PHOTO-CARRIER LIFETIME IN INTRINSIC A-SI-H
PERSANS, PD
FRITZSCHE, H
[J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 597 - 600
[4] DUAL-BEAM PHOTOCONDUCTIVITY MODULATION SPECTROSCOPY IN A-SI-H
PERSANS, PD
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 46 (05): : 435 - 471
[5] Rose A., 1978, CONCEPTS PHOTOCONDUC, V2nd ed.
[6] REVERSIBLE CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED AMORPHOUS SI
STAEBLER, DL
WRONSKI, CR
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (04) : 292 - 294
[7] VANIER PE, 1982, J APPL PHYS, V53, P4