DENSITY OF GAP-STATES IN N-TYPE AND P-TYPE A-SI-H

被引：20

作者：

BEICHLER, J

MELL, H

WEBER, K

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1983年 / 59-6卷 / DEC期

关键词：

D O I：

10.1016/0022-3093(83)90570-7

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：257 / 260

页数：4

共 9 条

[1]

BEICHLER J, 1982, 4TH P EC PHOT SOL EN, P448

[2]

BEICHLER J, UNPUB

[3] CALCULATION OF THE DYNAMIC-RESPONSE OF SCHOTTKY BARRIERS WITH A CONTINUOUS DISTRIBUTION OF GAP STATES [J].

COHEN, JD ;

LANG, DV .

PHYSICAL REVIEW B, 1982, 25 (08) :5321-5350

[4] TRAP SPECTROSCOPY OF A-SI-H DIODES USING TRANSIENT CURRENT TECHNIQUES [J].

CRANDALL, RS .

JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (04) :713-726

[5] FREQUENCY AND TEMPERATURE-DEPENDENCE OF THE SPACE-CHARGE CAPACITANCE IN A-SI-H FILMS [J].

GLADE, A ;

FUHS, W ;

MELL, H .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :269-272

[6] SCHOTTKY BARRIERS ON P-TYPE A-SI-H [J].

GREEB, KH ;

FUHS, W ;

MELL, H ;

WELSCH, HM .

SOLAR ENERGY MATERIALS, 1982, 7 (02) :253-261

[7]

LANG DV, 1982, PHYS REV B, V25, P5225

[8] ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY - ITS APPLICATION TO THE STUDY OF GAP STATES OF A-SI-H [J].

OKUSHI, H ;

TOKUMARU, Y ;

YAMASAKI, S ;

OHEDA, H ;

TANAKA, K .

JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :613-616

[9] MEASUREMENT AND ANALYSIS OF CURRENT TRANSIENTS IN WELL-CHARACTERIZED A-SI-H [J].

THOMPSON, MJ ;

JOHNSON, NM ;

STREET, RA .

JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :617-620

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