MEASUREMENT AND ANALYSIS OF CURRENT TRANSIENTS IN WELL-CHARACTERIZED A-SI-H

被引:6
作者
THOMPSON, MJ [1 ]
JOHNSON, NM [1 ]
STREET, RA [1 ]
机构
[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
来源
JOURNAL DE PHYSIQUE | 1981年 / 42卷 / NC4期
关键词
D O I
10.1051/jphyscol:19814135
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页码:617 / 620
页数:4
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共 7 条
[1]   DIRECT MEASUREMENT OF THE BULK-DENSITY OF GAP STATES IN N-TYPE HYDROGENATED AMORPHOUS-SILICON [J].
COHEN, JD ;
LANG, DV ;
HARBISON, JP .
PHYSICAL REVIEW LETTERS, 1980, 45 (03) :197-200
[2]   TRAP SPECTROSCOPY OF A-SI-H DIODES USING TRANSIENT CURRENT TECHNIQUES [J].
CRANDALL, RS .
JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (04) :713-726
[3]  
JOHNSON NM, AIP C P
[4]   DISPERSIVE (NON-GAUSSIAN) TRANSIENT TRANSPORT IN DISORDERED SOLIDS [J].
PFISTER, G ;
SCHER, H .
ADVANCES IN PHYSICS, 1978, 27 (05) :747-798
[5]   THEORY OF TRANSIENT EMISSION CURRENT IN MOS DEVICES AND DIRECT DETERMINATION INTERFACE TRAP PARAMETERS [J].
SIMMONS, JG ;
WEI, LS .
SOLID-STATE ELECTRONICS, 1974, 17 (02) :117-124
[6]  
STREET RA, 1978, PHYS REV B, V18, P1800
[7]  
THOMPSON MJ, 1981, APPL PHYS LETT