THEORY OF TRANSIENT EMISSION CURRENT IN MOS DEVICES AND DIRECT DETERMINATION INTERFACE TRAP PARAMETERS

被引：84

作者：

SIMMONS, JG ^{[1
]}

WEI, LS ^{[1
]}

机构：

[1] UNIV TORONTO, ELECTR ENGN DEPT, TORONTO, ONTARIO, CANADA

来源：

SOLID-STATE ELECTRONICS | 1974年 / 17卷 / 02期

关键词：

D O I：

10.1016/0038-1101(74)90059-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：117 / 124

页数：8

共 12 条

[1] SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES
BERGLUND, CN
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) : 701 - +
[2] CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON
DEAL, BE
SKLAR, M
GROVE, AS
SNOW, EH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) : 266 - +
[3] COMMENT ON DENSITY OF SIO2-SI INTERFACE STATES BY GRAY AND BROWN
FRANKL, DR
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (04) : 1996 - &
[4] SURFACE STATES IN SILICON FROM CHARGES IN OXIDE COATING
GOETZBERGER, A
HEINE, V
NICOLLIAN, EH
[J]. APPLIED PHYSICS LETTERS, 1968, 12 (03) : 95 - +
[5] DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E)
GRAY, PV
BROWN, DM
[J]. APPLIED PHYSICS LETTERS, 1966, 8 (02) : 31 - &
[6] FIELD EFFECT-CAPACITANCE ANALYSIS OF SURFACE STATES ON SILICON
LEHOVEC, K
SLOBODSKOY, A
SPRAGUE, JL
[J]. PHYSICA STATUS SOLIDI, 1963, 3 (03): : 447 - 464
[7] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE
NICOLLIA.EH
GOETZBER.A
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06): : 1055 - +
[8] MOS CONDUCTANCE TECHNIQUE FOR MEASURING SURFACE STATE PARAMETERS (SIO2-SI E)
NICOLLIAN, EH
GOETZBERGER, A
[J]. APPLIED PHYSICS LETTERS, 1965, 7 (08) : 216 - +
[9] SIMMONS JG, 1973, SOLID STATE ELECTRON, V16, P43, DOI 10.1016/0038-1101(73)90124-X
[10] THEORY OF DYNAMIC CHARGE CURRENT AND CAPACITANCE CHARACTERISTICS IN MIS SYSTEMS CONTAINING DISTRIBUTED SURFACE TRAPS
SIMMONS, JG
WEI, LS
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (01) : 53 - 66

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