THEORY OF DYNAMIC CHARGE CURRENT AND CAPACITANCE CHARACTERISTICS IN MIS SYSTEMS CONTAINING DISTRIBUTED SURFACE TRAPS

被引：53

作者：

SIMMONS, JG ^{[1
]}

WEI, LS ^{[1
]}

机构：

[1] UNIV TORONTO, ELECT ENGN DEPT, TORONTO, ONTARIO, CANADA

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 01期

关键词：

D O I：

10.1016/0038-1101(73)90125-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：53 / 66

页数：14

共 25 条

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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (12) : 1009 - +
[7] DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E)
GRAY, PV
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[J]. APPLIED PHYSICS LETTERS, 1966, 8 (02) : 31 - &
[8] Grove A S, 1967, PHYS TECHNOLOGY SEMI
[9] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES
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[J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 145 - +
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