DEEP-LEVEL DISTRIBUTIONS IN HYDROGENATED AMORPHOUS-SILICON

被引：24

作者：

JOHNSON, NM

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1983年 / 59-6卷 / DEC期

关键词：

D O I：

10.1016/0022-3093(83)90572-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：265 / 268

页数：4

共 10 条

[1] CALCULATION OF THE DYNAMIC-RESPONSE OF SCHOTTKY BARRIERS WITH A CONTINUOUS DISTRIBUTION OF GAP STATES [J].

COHEN, JD ;

LANG, DV .

PHYSICAL REVIEW B, 1982, 25 (08) :5321-5350

[2] MEASUREMENT OF SEMICONDUCTOR INSULATOR INTERFACE STATES BY CONSTANT-CAPACITANCE, DEEP-LEVEL TRANSIENT SPECTROSCOPY [J].

JOHNSON, NM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :303-314

[3] MEASUREMENT OF DEEP LEVELS IN HYDROGENATED AMORPHOUS-SILICON BY TRANSIENT VOLTAGE SPECTROSCOPY [J].

JOHNSON, NM .

APPLIED PHYSICS LETTERS, 1983, 42 (11) :981-983

[4]

JOHNSON NR, UNPUB

[5] MEASUREMENT OF THE DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY SPACE-CHARGE SPECTROSCOPY [J].

LANG, DV ;

COHEN, JD ;

HARBISON, JP .

PHYSICAL REVIEW B, 1982, 25 (08) :5285-5320

[6] ENERGY-DEPENDENCE OF ELECTRON-CAPTURE CROSS-SECTION OF GAP STATES IN N-TYPE ALPHA-SI-H [J].

OKUSHI, H ;

TOKUMARU, Y ;

YAMASAKI, S ;

OHEDA, H ;

TANAKA, K .

PHYSICAL REVIEW B, 1982, 25 (06) :4313-4316

[7] TEMPERATURE-DEPENDENCE OF ELECTRON-CAPTURE CROSS-SECTION OF LOCALIZED STATES IN A-SI-H [J].

OKUSHI, H ;

TAKAHAMA, T ;

TOKUMARU, Y ;

YAMASAKI, S ;

OHEDA, H ;

TANAKA, K .

PHYSICAL REVIEW B, 1983, 27 (08) :5184-5187

[8] DEFECT STATES IN DOPED AND COMPENSATED A-SI-H [J].

STREET, RA ;

BIEGELSEN, DK ;

KNIGHTS, JC .

PHYSICAL REVIEW B, 1981, 24 (02) :969-984

[9] TIME-OF-FLIGHT PHOTOCONDUCTIVITY IN A-SI-H [J].

STREET, RA ;

ZESCH, J .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :449-452

[10] TRAP DEPTH AND ELECTRON-CAPTURE CROSS-SECTION DETERMINATION BY TRAP REFILLING EXPERIMENTS IN SCHOTTKY DIODES [J].

ZYLBERSZTEJN, A .

APPLIED PHYSICS LETTERS, 1978, 33 (02) :200-202

← 1 →