TEMPERATURE-DEPENDENCE OF ELECTRON-CAPTURE CROSS-SECTION OF LOCALIZED STATES IN A-SI-H

[1] IDENTIFICATION OF THE DANGLING-BOND STATE WITHIN THE MOBILITY GAP OF ALPHA-SI-H BY DEPLETION-WIDTH-MODULATED ELECTRON-SPIN-RESONANCE SPECTROSCOPY [J]. PHYSICAL REVIEW LETTERS, 1982, 48 (02) : 109 - 112

[2] THERMOELECTRIC-POWER IN PHOSPHORUS DOPED AMORPHOUS SILICON [J]. PHILOSOPHICAL MAGAZINE, 1977, 36 (03): : 541 - 551

[3] MEASUREMENT OF THE DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY SPACE-CHARGE SPECTROSCOPY [J]. PHYSICAL REVIEW B, 1982, 25 (08) : 5285 - 5320

[4] RADIATIVE AND NONRADIATIVE RECOMBINATION PROCESSES IN HYDROGENATED AMORPHOUS-SILICON AS ELUCIDATED BY OPTICALLY DETECTED MAGNETIC-RESONANCE [J]. SOLID STATE COMMUNICATIONS, 1981, 39 (09) : 947 - 951

[5] ENERGY-DEPENDENCE OF ELECTRON-CAPTURE CROSS-SECTION OF GAP STATES IN N-TYPE ALPHA-SI-H [J]. PHYSICAL REVIEW B, 1982, 25 (06): : 4313 - 4316

[6] DETERMINATION OF THE DENSITY OF STATE DISTRIBUTION OF A-SI-H BY ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (07) : L549 - L552

[7] ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY - ITS APPLICATION TO THE STUDY OF GAP STATES OF A-SI-H [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 613 - 616

[8] Okushi H., 1982, Japanese Journal of Applied Physics, Supplement, V21, P259

[9] OKUSHI H, UNPUB

[10] NON-RADIATIVE TRANSITIONS [J]. PHILOSOPHICAL MAGAZINE, 1976, 33 (05) : 753 - 774

[1] IDENTIFICATION OF THE DANGLING-BOND STATE WITHIN THE MOBILITY GAP OF ALPHA-SI-H BY DEPLETION-WIDTH-MODULATED ELECTRON-SPIN-RESONANCE SPECTROSCOPY [J]. PHYSICAL REVIEW LETTERS, 1982, 48 (02) : 109 - 112

[2] THERMOELECTRIC-POWER IN PHOSPHORUS DOPED AMORPHOUS SILICON [J]. PHILOSOPHICAL MAGAZINE, 1977, 36 (03): : 541 - 551

[3] MEASUREMENT OF THE DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY SPACE-CHARGE SPECTROSCOPY [J]. PHYSICAL REVIEW B, 1982, 25 (08) : 5285 - 5320

[4] RADIATIVE AND NONRADIATIVE RECOMBINATION PROCESSES IN HYDROGENATED AMORPHOUS-SILICON AS ELUCIDATED BY OPTICALLY DETECTED MAGNETIC-RESONANCE [J]. SOLID STATE COMMUNICATIONS, 1981, 39 (09) : 947 - 951

[5] ENERGY-DEPENDENCE OF ELECTRON-CAPTURE CROSS-SECTION OF GAP STATES IN N-TYPE ALPHA-SI-H [J]. PHYSICAL REVIEW B, 1982, 25 (06): : 4313 - 4316

[6] DETERMINATION OF THE DENSITY OF STATE DISTRIBUTION OF A-SI-H BY ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (07) : L549 - L552

[7] ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY - ITS APPLICATION TO THE STUDY OF GAP STATES OF A-SI-H [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 613 - 616

[8] Okushi H., 1982, Japanese Journal of Applied Physics, Supplement, V21, P259

[9] OKUSHI H, UNPUB

[10] NON-RADIATIVE TRANSITIONS [J]. PHILOSOPHICAL MAGAZINE, 1976, 33 (05) : 753 - 774