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DETERMINATION OF THE DENSITY OF STATE DISTRIBUTION OF A-SI-H BY ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY
被引:50
作者
:
OKUSHI, H
论文数:
0
引用数:
0
h-index:
0
OKUSHI, H
TOKUMARU, Y
论文数:
0
引用数:
0
h-index:
0
TOKUMARU, Y
YAMASAKI, S
论文数:
0
引用数:
0
h-index:
0
YAMASAKI, S
OHEDA, H
论文数:
0
引用数:
0
h-index:
0
OHEDA, H
TANAKA, K
论文数:
0
引用数:
0
h-index:
0
TANAKA, K
机构
:
来源
:
JAPANESE JOURNAL OF APPLIED PHYSICS
|
1981年
/ 20卷
/ 07期
关键词
:
D O I
:
10.1143/JJAP.20.L549
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:L549 / L552
页数:4
相关论文
共 16 条
[1]
DETERMINATION OF STATES DISTRIBUTION IN HYDROGENATED AMORPHOUS-SILICON USING MIS TUNNEL-JUNCTIONS
BALBERG, I
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, PRINCETON, NJ 08540 USA
RCA LABS, PRINCETON, NJ 08540 USA
BALBERG, I
[J].
PHYSICAL REVIEW B,
1980,
22
(08)
: 3853
-
3865
[2]
CAPACITANCE STUDIES ON AMORPHOUS-SILICON SCHOTTKY-BARRIER DIODES
BEICHLER, J
论文数:
0
引用数:
0
h-index:
0
BEICHLER, J
FUHS, W
论文数:
0
引用数:
0
h-index:
0
FUHS, W
MELL, H
论文数:
0
引用数:
0
h-index:
0
MELL, H
WELSCH, HM
论文数:
0
引用数:
0
h-index:
0
WELSCH, HM
[J].
JOURNAL OF NON-CRYSTALLINE SOLIDS,
1980,
35-6
(JAN-)
: 587
-
592
[3]
DIRECT MEASUREMENT OF THE BULK-DENSITY OF GAP STATES IN N-TYPE HYDROGENATED AMORPHOUS-SILICON
COHEN, JD
论文数:
0
引用数:
0
h-index:
0
COHEN, JD
LANG, DV
论文数:
0
引用数:
0
h-index:
0
LANG, DV
HARBISON, JP
论文数:
0
引用数:
0
h-index:
0
HARBISON, JP
[J].
PHYSICAL REVIEW LETTERS,
1980,
45
(03)
: 197
-
200
[4]
ELECTRONIC DENSITY OF STATES IN DISCHARGE-PRODUCED AMORPHOUS SILICON
HIROSE, M
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
HIROSE, M
SUZUKI, T
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
SUZUKI, T
DOHLER, GH
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
DOHLER, GH
[J].
APPLIED PHYSICS LETTERS,
1979,
34
(03)
: 234
-
236
[5]
DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
LANG, DV
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
LANG, DV
[J].
JOURNAL OF APPLIED PHYSICS,
1974,
45
(07)
: 3023
-
3032
[6]
LeComber P. G., 1979, Amorphous semiconductors, P251
[7]
INVESTIGATION OF DENSITY OF LOCALIZED STATES IN A-SI USING FIELD-EFFECT TECHNIQUE
MADAN, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV DUNDEE,CARNEGIE LAB PHYS,DUNDEE DD1 4HN,SCOTLAND
UNIV DUNDEE,CARNEGIE LAB PHYS,DUNDEE DD1 4HN,SCOTLAND
MADAN, A
LECOMBER, PG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV DUNDEE,CARNEGIE LAB PHYS,DUNDEE DD1 4HN,SCOTLAND
UNIV DUNDEE,CARNEGIE LAB PHYS,DUNDEE DD1 4HN,SCOTLAND
LECOMBER, PG
SPEAR, WE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV DUNDEE,CARNEGIE LAB PHYS,DUNDEE DD1 4HN,SCOTLAND
UNIV DUNDEE,CARNEGIE LAB PHYS,DUNDEE DD1 4HN,SCOTLAND
SPEAR, WE
[J].
JOURNAL OF NON-CRYSTALLINE SOLIDS,
1976,
20
(02)
: 239
-
257
[8]
ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY FOR DETERMINATION OF DEEP LEVEL PARAMETERS
OKUSHI, H
论文数:
0
引用数:
0
h-index:
0
OKUSHI, H
TOKUMARU, Y
论文数:
0
引用数:
0
h-index:
0
TOKUMARU, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(06)
: L335
-
L338
[9]
ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY
OKUSHI, H
论文数:
0
引用数:
0
h-index:
0
OKUSHI, H
TOKUMARU, Y
论文数:
0
引用数:
0
h-index:
0
TOKUMARU, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1981,
20
(01)
: 261
-
264
[10]
Okushi H., 1981, Japanese Journal of Applied Physics, V20, P205
←
1
2
→
共 16 条
[1]
DETERMINATION OF STATES DISTRIBUTION IN HYDROGENATED AMORPHOUS-SILICON USING MIS TUNNEL-JUNCTIONS
BALBERG, I
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, PRINCETON, NJ 08540 USA
RCA LABS, PRINCETON, NJ 08540 USA
BALBERG, I
[J].
PHYSICAL REVIEW B,
1980,
22
(08)
: 3853
-
3865
[2]
CAPACITANCE STUDIES ON AMORPHOUS-SILICON SCHOTTKY-BARRIER DIODES
BEICHLER, J
论文数:
0
引用数:
0
h-index:
0
BEICHLER, J
FUHS, W
论文数:
0
引用数:
0
h-index:
0
FUHS, W
MELL, H
论文数:
0
引用数:
0
h-index:
0
MELL, H
WELSCH, HM
论文数:
0
引用数:
0
h-index:
0
WELSCH, HM
[J].
JOURNAL OF NON-CRYSTALLINE SOLIDS,
1980,
35-6
(JAN-)
: 587
-
592
[3]
DIRECT MEASUREMENT OF THE BULK-DENSITY OF GAP STATES IN N-TYPE HYDROGENATED AMORPHOUS-SILICON
COHEN, JD
论文数:
0
引用数:
0
h-index:
0
COHEN, JD
LANG, DV
论文数:
0
引用数:
0
h-index:
0
LANG, DV
HARBISON, JP
论文数:
0
引用数:
0
h-index:
0
HARBISON, JP
[J].
PHYSICAL REVIEW LETTERS,
1980,
45
(03)
: 197
-
200
[4]
ELECTRONIC DENSITY OF STATES IN DISCHARGE-PRODUCED AMORPHOUS SILICON
HIROSE, M
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
HIROSE, M
SUZUKI, T
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
SUZUKI, T
DOHLER, GH
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
DOHLER, GH
[J].
APPLIED PHYSICS LETTERS,
1979,
34
(03)
: 234
-
236
[5]
DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
LANG, DV
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
LANG, DV
[J].
JOURNAL OF APPLIED PHYSICS,
1974,
45
(07)
: 3023
-
3032
[6]
LeComber P. G., 1979, Amorphous semiconductors, P251
[7]
INVESTIGATION OF DENSITY OF LOCALIZED STATES IN A-SI USING FIELD-EFFECT TECHNIQUE
MADAN, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV DUNDEE,CARNEGIE LAB PHYS,DUNDEE DD1 4HN,SCOTLAND
UNIV DUNDEE,CARNEGIE LAB PHYS,DUNDEE DD1 4HN,SCOTLAND
MADAN, A
LECOMBER, PG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV DUNDEE,CARNEGIE LAB PHYS,DUNDEE DD1 4HN,SCOTLAND
UNIV DUNDEE,CARNEGIE LAB PHYS,DUNDEE DD1 4HN,SCOTLAND
LECOMBER, PG
SPEAR, WE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV DUNDEE,CARNEGIE LAB PHYS,DUNDEE DD1 4HN,SCOTLAND
UNIV DUNDEE,CARNEGIE LAB PHYS,DUNDEE DD1 4HN,SCOTLAND
SPEAR, WE
[J].
JOURNAL OF NON-CRYSTALLINE SOLIDS,
1976,
20
(02)
: 239
-
257
[8]
ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY FOR DETERMINATION OF DEEP LEVEL PARAMETERS
OKUSHI, H
论文数:
0
引用数:
0
h-index:
0
OKUSHI, H
TOKUMARU, Y
论文数:
0
引用数:
0
h-index:
0
TOKUMARU, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(06)
: L335
-
L338
[9]
ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY
OKUSHI, H
论文数:
0
引用数:
0
h-index:
0
OKUSHI, H
TOKUMARU, Y
论文数:
0
引用数:
0
h-index:
0
TOKUMARU, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1981,
20
(01)
: 261
-
264
[10]
Okushi H., 1981, Japanese Journal of Applied Physics, V20, P205
←
1
2
→