DETERMINATION OF STATES DISTRIBUTION IN HYDROGENATED AMORPHOUS-SILICON USING MIS TUNNEL-JUNCTIONS

被引:18
作者
BALBERG, I [1 ]
机构
[1] RCA LABS, PRINCETON, NJ 08540 USA
关键词
D O I
10.1103/PhysRevB.22.3853
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
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页码:3853 / 3865
页数:13
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共 64 条
[1]   DENSITY OF STATES IN GAP OF TETRAHEDRALLY BONDED AMORPHOUS-SEMICONDUCTORS [J].
ADLER, D .
PHYSICAL REVIEW LETTERS, 1978, 41 (25) :1755-1758
[2]  
ALLAN DC, 1980, PHYS REV LETT, V44, P43, DOI 10.1103/PhysRevLett.44.43
[3]   HYDROGEN CHEMISORPTION ON SI - NEW TYPE OF CHEMISORPTIVE BOND [J].
APPELBAUM, JA ;
HAMANN, DR ;
TASSO, KH .
PHYSICAL REVIEW LETTERS, 1977, 39 (23) :1487-1490
[4]   TUNNELING IN HYDROGENATED AMORPHOUS SILICON [J].
BALBERG, I ;
CARLSON, DE .
PHYSICAL REVIEW LETTERS, 1979, 43 (01) :58-61
[5]   STUDY OF THE ELECTRONIC-STRUCTURE OF A-SI-H BY TUNNELING [J].
BALBERG, I .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :605-610
[6]   THEORY OF FIELD EFFECT IN AMORPHOUS COVALENT SEMICONDUCTOR FILMS [J].
BARBE, DF .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (01) :102-&
[7]   HYDROGENATION AND THE DENSITY OF DEFECT STATES IN AMORPHOUS SILICON [J].
BRODSKY, MH ;
KAPLAN, D .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 32 (1-3) :431-435
[8]   SI-SIO2 FAST INTERFACE STATE MEASUREMENTS [J].
BROWN, DM ;
GRAY, PV .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (07) :760-+
[9]   STUDIES OF TUNNEL MOS DIODES .2. THERMAL EQUILIBRIUM CONSIDERATIONS [J].
CARD, HC ;
RHODERICK, EH .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) :1602-+
[10]   CONDUCTANCE ASSOCIATED WITH INTERFACE STATES IN MOS TUNNEL STRUCTURES [J].
CARD, HC ;
RHODERICK, EH .
SOLID-STATE ELECTRONICS, 1972, 15 (09) :993-+