TUNNELING IN HYDROGENATED AMORPHOUS SILICON

被引：30

作者：

BALBERG, I ^{[1
]}

CARLSON, DE ^{[1
]}

机构：

[1] RCA, PRINCETON, NJ 08540 USA

来源：

PHYSICAL REVIEW LETTERS | 1979年 / 43卷 / 01期

关键词：

D O I：

10.1103/PhysRevLett.43.58

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

For the first time, structure has been found in the electron tunneling characteristics of a metal-oxide-semiconductor tunnel junction of an amorphous semiconductor. In the present study the amorphous semiconductor is phosphorus-doped hydrogenated amorphous silicon. The results have been analyzed to determine the surface density of states over part of the forbidden gap. The basic features of the density-of-states distribution are in agreement with the results of field-effect measurements reported for this material. © 1979 The American Physical Society.

引用

页码：58 / 61

页数：4

共 18 条

[1]

CARBAJAL BG, 1966, T METALL SOC AIME, V236, P364

[2] AMORPHOUS SILICON SOLAR-CELL [J].