ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY

[1] BRAUNLICH P, 1979, TOPICS APPLIED PHYSI, V37

[2] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032

[3] ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY FOR DETERMINATION OF DEEP LEVEL PARAMETERS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (06) : L335 - L338

[4] THERMAL EMISSION RATES OF CARRIERS AT GOLD CENTERS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1969, 15 (05) : 145 - +

[5] THERMAL AND OPTICAL EMISSION AND CAPTURE RATES AND CROSS SECTIONS OF ELECTRONS AND HOLES AT IMPERFECTION CENTERS IN SEMICONDUCTORS FROM PHOTO AND DARK JUNCTION CURRENT AND CAPACITANCE EXPERIMENTS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 759 - +

[1] BRAUNLICH P, 1979, TOPICS APPLIED PHYSI, V37

[2] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032

[3] ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY FOR DETERMINATION OF DEEP LEVEL PARAMETERS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (06) : L335 - L338

[4] THERMAL EMISSION RATES OF CARRIERS AT GOLD CENTERS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1969, 15 (05) : 145 - +

[5] THERMAL AND OPTICAL EMISSION AND CAPTURE RATES AND CROSS SECTIONS OF ELECTRONS AND HOLES AT IMPERFECTION CENTERS IN SEMICONDUCTORS FROM PHOTO AND DARK JUNCTION CURRENT AND CAPACITANCE EXPERIMENTS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 759 - +