ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY FOR DETERMINATION OF DEEP LEVEL PARAMETERS

[1] Lang D.V., 1979, TOP APPL PHYS, P93, DOI 10.1007/3540095950_9

[2] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032

[3] MARTIN GM, 1978, SEMICONDUCTOR CHARAC, P32

[4] MITONNEAU A, 1976, PHILIPS RES REP, V31, P244

[5] OKUSHI H, 1979, SSD78100 TECH GROUP

[6] THERMAL EMISSION RATES OF CARRIERS AT GOLD CENTERS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1969, 15 (05) : 145 - +

[7] THERMAL AND OPTICAL EMISSION AND CAPTURE RATES AND CROSS SECTIONS OF ELECTRONS AND HOLES AT IMPERFECTION CENTERS IN SEMICONDUCTORS FROM PHOTO AND DARK JUNCTION CURRENT AND CAPACITANCE EXPERIMENTS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 759 - +

[8] THEORY OF ISOTHERMAL CURRENTS AND DIRECT DETERMINATION OF TRAP PARAMETERS IN SEMICONDUCTORS AND INSULATORS CONTAINING ARBITRARY TRAP DISTRIBUTIONS [J]. PHYSICAL REVIEW B, 1973, 7 (08): : 3706 - 3713

[9] RECOMBINATION-GENERATION AND OPTICAL PROPERTIES OF GOLD ACCEPTOR IN SILICON [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02): : 800 - &

[1] Lang D.V., 1979, TOP APPL PHYS, P93, DOI 10.1007/3540095950_9

[2] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032

[3] MARTIN GM, 1978, SEMICONDUCTOR CHARAC, P32

[4] MITONNEAU A, 1976, PHILIPS RES REP, V31, P244

[5] OKUSHI H, 1979, SSD78100 TECH GROUP

[6] THERMAL EMISSION RATES OF CARRIERS AT GOLD CENTERS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1969, 15 (05) : 145 - +

[7] THERMAL AND OPTICAL EMISSION AND CAPTURE RATES AND CROSS SECTIONS OF ELECTRONS AND HOLES AT IMPERFECTION CENTERS IN SEMICONDUCTORS FROM PHOTO AND DARK JUNCTION CURRENT AND CAPACITANCE EXPERIMENTS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 759 - +

[8] THEORY OF ISOTHERMAL CURRENTS AND DIRECT DETERMINATION OF TRAP PARAMETERS IN SEMICONDUCTORS AND INSULATORS CONTAINING ARBITRARY TRAP DISTRIBUTIONS [J]. PHYSICAL REVIEW B, 1973, 7 (08): : 3706 - 3713

[9] RECOMBINATION-GENERATION AND OPTICAL PROPERTIES OF GOLD ACCEPTOR IN SILICON [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02): : 800 - &