THERMOELECTRIC-POWER IN PHOSPHORUS DOPED AMORPHOUS SILICON

被引：88

作者：

JONES, DI ^{[1
]}

COMBER, PGL ^{[1
]}

SPEAR, WE ^{[1
]}

机构：

[1] UNIV DUNDEE,CARNEGIE LAB PHYS,DUNDEE DD1 4HN,SCOTLAND

来源：

PHILOSOPHICAL MAGAZINE | 1977年 / 36卷 / 03期

关键词：

D O I：

10.1080/14786437708239738

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：541 / 551

页数：11

共 14 条

[1] ALLAN D, 1977, 7TH P INT C AM LIQ S, P323
[2] BEYER W, 1977, COMMUN PHYS, V2, P121
[3] ELECTRICAL-CONDUCTIVITY AND THERMOELECTRIC-POWER OF SUBSTITUTIONALLY DOPED AMORPHOUS SILICON
FRIEDMAN, L
[J]. PHILOSOPHICAL MAGAZINE, 1977, 36 (03): : 553 - 564
[4] GENERAL EXPRESSION FOR THERMOELECTRIC POWER
FRITZSCHE, H
[J]. SOLID STATE COMMUNICATIONS, 1971, 9 (21) : 1813 - +
[5] JONES DI, 1976, J NON-CRYST SOLIDS, V20, P259, DOI 10.1016/0022-3093(76)90135-6
[6] JONES DI, 1976, COMMUN PHYS, V1, P39
[7] Le Comber P. G., 1972, Journal of Non-Crystalline Solids, V11, P219, DOI 10.1016/0022-3093(72)90004-X
[8] ELECTRONIC TRANSPORT IN AMORPHOUS SILICON FILMS
LECOMBER, PG
SPEAR, WE
[J]. PHYSICAL REVIEW LETTERS, 1970, 25 (08) : 509 - &
[9] HALL-EFFECT AND IMPURITY CONDUCTION IN SUBSTITUTIONALLY DOPED AMORPHOUS SILICON
LECOMBER, PG
JONES, DI
SPEAR, WE
[J]. PHILOSOPHICAL MAGAZINE, 1977, 35 (05): : 1173 - 1187
[10] INVESTIGATION OF DENSITY OF LOCALIZED STATES IN A-SI USING FIELD-EFFECT TECHNIQUE
MADAN, A
LECOMBER, PG
SPEAR, WE
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1976, 20 (02) : 239 - 257