ELECTRICAL-CONDUCTIVITY AND THERMOELECTRIC-POWER OF SUBSTITUTIONALLY DOPED AMORPHOUS SILICON

被引：12

作者：

FRIEDMAN, L ^{[1
]}

机构：

[1] UNIV ST ANDREWS,DEPT THEORET PHYS,ST ANDREWS KY16 9ST,FIFE,SCOTLAND

来源：

PHILOSOPHICAL MAGAZINE | 1977年 / 36卷 / 03期

关键词：

D O I：

10.1080/14786437708239739

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：553 / 564

页数：12

共 13 条

[1] NATURE OF ELECTRONIC STATES OF DISORDERED SYSTEM .1. LOCALIZED STATES
ABRAM, RA
EDWARDS, SF
[J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (11): : 1183 - +
[2] BEYER W, 1977, COMMUN PHYS, V2, P121
[3] Friedman L., 1971, J NONCRYST SOLIDS, V6, P329
[4] GENERAL EXPRESSION FOR THERMOELECTRIC POWER
FRITZSCHE, H
[J]. SOLID STATE COMMUNICATIONS, 1971, 9 (21) : 1813 - +
[5] Hindley N. K., 1970, Journal of Non-Crystalline Solids, V5, P17, DOI 10.1016/0022-3093(70)90193-6
[6] THERMOELECTRIC-POWER IN PHOSPHORUS DOPED AMORPHOUS SILICON
JONES, DI
COMBER, PGL
SPEAR, WE
[J]. PHILOSOPHICAL MAGAZINE, 1977, 36 (03): : 541 - 551
[7] Le Comber P. G., 1972, Journal of Non-Crystalline Solids, V11, P219, DOI 10.1016/0022-3093(72)90004-X
[8] HALL-EFFECT AND IMPURITY CONDUCTION IN SUBSTITUTIONALLY DOPED AMORPHOUS SILICON
LECOMBER, PG
JONES, DI
SPEAR, WE
[J]. PHILOSOPHICAL MAGAZINE, 1977, 35 (05): : 1173 - 1187
[9] INVESTIGATION OF DENSITY OF LOCALIZED STATES IN A-SI USING FIELD-EFFECT TECHNIQUE
MADAN, A
LECOMBER, PG
SPEAR, WE
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1976, 20 (02) : 239 - 257
[10] ELECTRONS IN DISORDERED STRUCTURES
MOTT, NF
[J]. ADVANCES IN PHYSICS, 1967, 16 (61) : 49 - +