MEASUREMENT OF DEEP LEVELS IN HYDROGENATED AMORPHOUS-SILICON BY TRANSIENT VOLTAGE SPECTROSCOPY

被引：41

作者：

JOHNSON, NM

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 11期

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D O I：

10.1063/1.93822

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：981 / 983

页数：3

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[1] DIRECT MEASUREMENT OF THE BULK-DENSITY OF GAP STATES IN N-TYPE HYDROGENATED AMORPHOUS-SILICON
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[6] MEASUREMENT OF THE DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY SPACE-CHARGE SPECTROSCOPY
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[7] ENERGY-DEPENDENCE OF ELECTRON-CAPTURE CROSS-SECTION OF GAP STATES IN N-TYPE ALPHA-SI-H
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[J]. PHYSICAL REVIEW B, 1982, 25 (06): : 4313 - 4316
[8] DETERMINATION OF THE DENSITY OF STATE DISTRIBUTION OF A-SI-H BY ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (07) : L549 - L552
[9] LUMINESCENCE STUDIES OF PLASMA-DEPOSITED HYDROGENATED SILICON
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[J]. PHYSICAL REVIEW B, 1978, 18 (04): : 1880 - 1891
[10] TRAP DEPTH AND ELECTRON-CAPTURE CROSS-SECTION DETERMINATION BY TRAP REFILLING EXPERIMENTS IN SCHOTTKY DIODES
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[J]. APPLIED PHYSICS LETTERS, 1978, 33 (02) : 200 - 202