ENERGY-LEVEL AND PHOTOIONIZATION CROSS-SECTION OF GAP STATES IN A-SI-H

[1] BIEGELSEN DK, 1984, AIP C P, V120, P32

[2] IDENTIFICATION OF THE DANGLING-BOND STATE WITHIN THE MOBILITY GAP OF ALPHA-SI-H BY DEPLETION-WIDTH-MODULATED ELECTRON-SPIN-RESONANCE SPECTROSCOPY [J]. PHYSICAL REVIEW LETTERS, 1982, 48 (02) : 109 - 112

[3] CONDUCTION IN NON-CRYSTALLINE SYSTEMS .5. CONDUCTIVITY, OPTICAL ABSORPTION AND PHOTOCONDUCTIVITY IN AMORPHOUS SEMICONDUCTORS [J]. PHILOSOPHICAL MAGAZINE, 1970, 22 (179): : 903 - &

[4] Hindley N. K., 1970, Journal of Non-Crystalline Solids, V5, P17, DOI 10.1016/0022-3093(70)90193-6

[5] THE ENERGY OF THE DANGLING-BOND STATES IN A-SI [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1986, 53 (01): : L1 - L7

[6] PHOTOINDUCED TRANSIENT LOCALIZED STATES IN A-SI-H [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 393 - 396

[7] GAP STATES IN PHOSPHORUS-DOPED AMORPHOUS-SILICON STUDIED BY ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 52 (01): : 33 - 57

[8] ENERGY-LEVELS OF DANGLING-BOND CENTERS IN A-SI-H STUDIED BY PHOTOCAPACITANCE TRANSIENT SPECTROSCOPY [J]. PHILOSOPHICAL MAGAZINE LETTERS, 1987, 55 (03) : 135 - 141

[9] DEFECT STATES AND CARRIER CAPTURE PROCESSES IN A-SI-H [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 66 (1-2) : 205 - 216

[1] BIEGELSEN DK, 1984, AIP C P, V120, P32

[2] IDENTIFICATION OF THE DANGLING-BOND STATE WITHIN THE MOBILITY GAP OF ALPHA-SI-H BY DEPLETION-WIDTH-MODULATED ELECTRON-SPIN-RESONANCE SPECTROSCOPY [J]. PHYSICAL REVIEW LETTERS, 1982, 48 (02) : 109 - 112

[3] CONDUCTION IN NON-CRYSTALLINE SYSTEMS .5. CONDUCTIVITY, OPTICAL ABSORPTION AND PHOTOCONDUCTIVITY IN AMORPHOUS SEMICONDUCTORS [J]. PHILOSOPHICAL MAGAZINE, 1970, 22 (179): : 903 - &

[4] Hindley N. K., 1970, Journal of Non-Crystalline Solids, V5, P17, DOI 10.1016/0022-3093(70)90193-6

[5] THE ENERGY OF THE DANGLING-BOND STATES IN A-SI [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1986, 53 (01): : L1 - L7

[6] PHOTOINDUCED TRANSIENT LOCALIZED STATES IN A-SI-H [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 393 - 396

[7] GAP STATES IN PHOSPHORUS-DOPED AMORPHOUS-SILICON STUDIED BY ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 52 (01): : 33 - 57

[8] ENERGY-LEVELS OF DANGLING-BOND CENTERS IN A-SI-H STUDIED BY PHOTOCAPACITANCE TRANSIENT SPECTROSCOPY [J]. PHILOSOPHICAL MAGAZINE LETTERS, 1987, 55 (03) : 135 - 141

[9] DEFECT STATES AND CARRIER CAPTURE PROCESSES IN A-SI-H [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 66 (1-2) : 205 - 216