THE ENERGY OF THE DANGLING-BOND STATES IN A-SI

被引：73

作者：

LECOMBER, PG

SPEAR, WE

机构：

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1986年 / 53卷 / 01期

关键词：

D O I：

10.1080/13642818608238960

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：L1 / L7

页数：7

共 19 条

[1] IDENTIFICATION OF THE DANGLING-BOND STATE WITHIN THE MOBILITY GAP OF ALPHA-SI-H BY DEPLETION-WIDTH-MODULATED ELECTRON-SPIN-RESONANCE SPECTROSCOPY
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[3] PHOTOINDUCED CHANGES IN THE BULK-DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON ASSOCIATED WITH THE STAEBLER-WRONSKI EFFECT
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LANG, DV
HARBISON, JP
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[J]. SOLAR CELLS, 1983, 9 (1-2): : 119 - 131
[4] SPACE-CHARGE SPECTROSCOPY OF THE GAP STATES IN HYDROGENATED AMORPHOUS-SILICON COUNTERDOPED WITH BORON
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[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 261 - 264
[5] ELECTRON-SPIN RESONANCE OF DOPED GLOW-DISCHARGE AMORPHOUS-SILICON
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[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 105 (01): : 265 - 274
[6] HEPBURN AR, 1985, UNPUB J NONCRYSTALLI
[7] JACKSON WB, 1982, PHYS REV B, V25, P559
[8] DEEP-LEVEL DISTRIBUTIONS IN HYDROGENATED AMORPHOUS-SILICON
JOHNSON, NM
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 265 - 268
[9] IDENTIFICATION OF DEEP-GAP STATES IN ALPHA-SI-H BY PHOTODEPOPULATION-INDUCED ELECTRON-SPIN RESONANCE
JOHNSON, NM
BIEGELSEN, DK
[J]. PHYSICAL REVIEW B, 1985, 31 (06): : 4066 - 4069
[10] MEASUREMENT OF THE DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY SPACE-CHARGE SPECTROSCOPY
LANG, DV
COHEN, JD
HARBISON, JP
[J]. PHYSICAL REVIEW B, 1982, 25 (08) : 5285 - 5320

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