ENERGY-LEVELS OF DANGLING-BOND CENTERS IN A-SI-H STUDIED BY PHOTOCAPACITANCE TRANSIENT SPECTROSCOPY

被引：12

作者：

OKUSHI, H

TANAKA, K

机构：

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 1987年 / 55卷 / 03期

关键词：

D O I：

10.1080/09500838708228745

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：135 / 141

页数：7

共 28 条

[1]

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[4]

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[8]

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[9] DIRECT MEASUREMENT OF GAP-STATE ABSORPTION IN HYDROGENATED AMORPHOUS-SILICON BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY [J].

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[10] IDENTIFICATION OF DEEP-GAP STATES IN ALPHA-SI-H BY PHOTODEPOPULATION-INDUCED ELECTRON-SPIN RESONANCE [J].

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