DEFECT CREATION ASSOCIATED WITH PHOSPHORUS DOPING AS ELUCIDATED BY PHOTOINDUCED ABSORPTION, PHOTOINDUCED ABSORPTION DETECTED ELECTRON-SPIN-RESONANCE AND ODMR

被引：11

作者：

HIRABAYASHI, I ^{[1
]}

MORIGAKI, K ^{[1
]}

NITTA, S ^{[1
]}

机构：

[1] GIFU UNIV,DEPT ELECT ENGN,GIFU 50111,JAPAN

来源：

关键词：

D O I：

10.1016/0022-3093(85)90712-4

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：519 / 522

页数：4

共 6 条

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[2]

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YAMASAKI, S ;

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TANAKA, K .

[4] DOPING AND THE FERMI ENERGY IN AMORPHOUS-SILICON [J].

STREET, RA .

[5] NEW PARAMAGNETIC STATES IN AMORPHOUS-SILICON AND GERMANIUM [J].

STUTZMANN, M ;

STUKE, J .

[6]

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