NEW PARAMAGNETIC STATES IN AMORPHOUS-SILICON AND GERMANIUM

被引：15

作者：

STUTZMANN, M ^{[1
]}

STUKE, J ^{[1
]}

机构：

[1] UNIV MARBURG,D-3550 MARBURG,FED REP GER

来源：

关键词：

D O I：

10.1016/0022-3093(84)90313-2

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：145 / 150

页数：6

共 9 条

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[8] MEASUREMENT OF THE DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY SPACE-CHARGE SPECTROSCOPY
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[9] ELECTRON-SPIN RESONANCE OF DOPED GLOW-DISCHARGE AMORPHOUS-GERMANIUM
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