OBSERVATION OF SUPERCONDUCTIVITY IN AN INDIUM-SILICON BISTABLE DEVICE

被引：5

作者：

BROOM, RF

机构：

来源：

APPLIED PHYSICS LETTERS | 1972年 / 21卷 / 11期

关键词：

D O I：

10.1063/1.1654254

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：551 / &

共 9 条

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LEVINSEN, MT .

PHYSICAL REVIEW LETTERS, 1971, 27 (13) :847-+

[5] ELECTRODE EFFECTS AND BISTABLE SWITCHING OF AMORPHOUS NB205 DIODES [J].

HICKMOTT, TW ;

HIATT, WR .

SOLID-STATE ELECTRONICS, 1970, 13 (07) :1033-&

[6] SWITCHING AND MEMORY CHARACTERISTICS OF ZNSE-GE HETEROJUNCTIONS [J].

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URGELL, JJ .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (12) :5076-&

[7]

IVANCHEN.YM, 1969, SOV PHYS JETP-USSR, V28, P1272

[8]

Ivanchenko Yu. M., 1968, Zhurnal Eksperimental'noi i Teoreticheskoi Fiziki, V55, P2395

[9] BISTABLE SWITCHING IN METAL-SEMICONDUCTOR JUNCTIONS [J].

MOSER, A .

APPLIED PHYSICS LETTERS, 1972, 20 (07) :244-&

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