ULTRASONIC WAVE PROPAGATION IN DOPED N-GERMANIUM + P-SILICON

被引：84

作者：

MASON, WP

BATEMAN, TB

机构：

来源：

PHYSICAL REVIEW A-GENERAL PHYSICS | 1964年 / 134卷 / 5A期

关键词：

D O I：

10.1103/PhysRev.134.A1387

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1387 / &

共 18 条

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[9] ULTRASONIC ATTENUATION AND VELOCITY CHANGES IN DOPED TYPE GERMANIUM AND RHO-TYPE SILICON ANDTHEIR USE IN DETERMINING AN INTRINSIC ELECTRON AND HOLE SCATTERING TIME [J].

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[10] ANALYSIS OF PULSE SUPERPOSITION METHOD FOR MEASURING ULTRASONIC WAVEVELOCITIES AS A FUNCTION OF TEMPERATURE AND PRESSURE [J].

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