IR TRANSMITTANCE STUDIES OF HYDROGEN-FREE AND HYDROGENATED SILICON-NITRIDE AND SILICON OXYNITRIDE FILMS DEPOSITED BY REACTIVE SPUTTERING

被引：29

作者：

SCHALCH, D

SCHARMANN, A

WOLFRAT, R

机构：

[1] Justus-Liebig-Univ Giessen, Giessen, West Ger, Justus-Liebig-Univ Giessen, Giessen, West Ger

来源：

THIN SOLID FILMS | 1987年 / 155卷 / 02期

关键词：

D O I：

10.1016/0040-6090(87)90074-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

SILICON NITRIDE

引用

页码：301 / 308

页数：8

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