BREAKDOWN PHENOMENA IN SILICON P-N JUNCTIONS UNDER MAGNETIC FIELD

被引：4

作者：

MEHTA, SC

PARSHAD, R

机构：

来源：

关键词：

D O I：

10.1063/1.1658744

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：760 / &

共 28 条

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