INLAID COPPER MULTILEVEL INTERCONNECTIONS USING PLANARIZATION BY CHEMICAL-MECHANICAL POLISHING

被引：32

作者：

MURARKA, SP

STEIGERWALD, J

GUTMANN, RJ

机构：

[1] RENSSELAER POLYTECH INST,CTR INTEGRATED ELECTR,TROY,NY 12181

[2] RENSSELAER POLYTECH INST,DEPT ELECT COMP & SYST ENGN,TROY,NY 12181

来源：

关键词：

D O I：

10.1557/S0883769400047321

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：46 / 51

页数：6

共 9 条

[1] CHEMICAL PROCESSES IN GLASS POLISHING [J].

COOK, LM .

[2]

KAANTA CW, 1991, 8TH P VLSI MULT INT, P144

[3]

KAUFMAN FB, 1991, J ELECTROCHEM SOC, V138, P460

[4]

KAUFMANN FB, 1992, COMMUNICATION

[5]

LANDIS H, 1992, SRC TOPICAL RES C CH

[6]

MURARKA SP, 1990, MATER RES SOC S P, V6, P179

PATRICK, WJ ;

GUTHRIE, WL ;

STANDLEY, CL ;

SCHIABLE, PM .

[8]

UTTECHT RR, 1991, 8TH P VLSI MULT INT

[9]

1988, SURFACTECH REV, V1, P3