CONTROL OF POLARIZATION OF LASER-DIODES

被引：5

作者：

NISHIZAWA, JI ^{[1
]}

FUKUDA, H ^{[1
]}

MORISHITA, M ^{[1
]}

机构：

[1] TOHOKU UNIV, ELECT COMMUN RES INST, SENDAI, MIYAGI 980, JAPAN

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1977年 / 13卷 / 08期

关键词：

D O I：

10.1109/JQE.1977.1069404

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：604 / 609

页数：6

共 19 条

[1]

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[6]

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[8] STIMULATED EMISSION OF RADIATION FROM GAAS P-N JUNCTIONS [J].

NATHAN, MI ;

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APPLIED PHYSICS LETTERS, 1962, 1 (03) :62-64

[9] EFFECTS OF ROUGHENING CLEAVED SURFACES ON CHARACTERISTICS OF GAAS INJECTION LASER DIODES [J].

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[10]

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